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  ar2003 fv 1 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv active/synchronous rectification controller description the ar2003 fv is active/synchronous rectification controller , providing output voltage from 4. 5v to 21 v. using internal drain - to - source voltage sensing, the ar2003 fv is ideal for fly - back, llc - resonant and other power supply architectures. it has sfb pin that can eliminate the external feedback resistor when target output voltage is 5v or 12v. the small footprint of the ar2003 fv makes it ideal for space constrained applications. intelligent featu res of this ic are the minimum off time (toff) and minimum on t ime (ton), these features blank the noise generated during the turn on and turn off instances of the power fet. light load detection for improved efficiency at light and no load is implemented . other features include under voltage lock o ut (uvlo), sync feature for ccm operation and low turn off threshold voltage for improved efficiency. features ? ? ? ? ? ? ? ? ? ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) pin assignments (top view) v - dfn3535 - 14 applications ? ? ? ? ? ? ? ? notes: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 3 4 5 6 7 1 4 1 3 1 2 1 1 1 0 1 2 9 8 v d a g n d t o n n c t o f f / e n s f b o v s n c v s v d v c c g n d d g a t e s y n c g a t e
ar2003 fv 2 of 1 5 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv typical applications circuit secondary - side s ynchronous r ectification primary - side s ynchronous r ectification active rectifier ar 2003 fv pwm ic t 1 opto coupler vcc ovs vd sfb dgate vs vcc gate + c c v cc e i sense v sense gnd + vd vcc vs gnd ar 2003 fv ton en / toff ovs gate vcc
ar2003 fv 3 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv pin descriptions pin number pin name function 1, 7 nc not c onnected 2 ton minimum o n - time s etting p in 3 agnd this is the ground reference for all internal comparators and thresholds. 4 toff/en enable pin/ minimum o ff - time this pin combines the functions of setting the programmable minimum off - time as well as acting as the enable pin. the device enters under voltage lock out (uvlo) mode when vcc falls below the uvlo threshold. at this point the toff/en pin is internally shorted to ground through a resistor. the internal current source (used for setting toff) is powered down. once the uvlo threshold is exceeded , the internal resistance is removed and the current source is activated. if the voltage applied to the toff/en pin exceeds the ven on threshold then the device is in active mode. if the voltage drops below the ven off threshold then the device is in sleep mode. 5 sfb output pin of internal feedback resistor which is connected to vcc. it is sent to tl431 (or its compatible) to drive the opto - coupler and provide feedback voltage to primary side controller to realize secondary synchronous rectification. 6 ovs output voltage (vcc) select pin, work together with sfb to select output voltage in 5v or 12v . 8 vs this is the connection to internal mosfet source. vs is also connected to gnd. 9 , vd pad vd this is a connection to the internal mosfet drain. the pin needs to be connected as closely as possible to the transformer used in the application, to minimize the effects of parasitic inductance on the performance of the device. the device requires that v d has a voltage greater than 1.5v and that the t off timer has expired before the mosfet is able to be activated. once these conditions are met and the voltage internally sensed on the vd pin is 150mv lower than the vs pin, the internal mosfet is turned on and the t on minimum on time period is started. the mosfet will remain on for at least the length of the minimum on time. the only thing that can override this is if a pulse is detected on the snyc pin. after the ton period, the mosfet remains on until the vd to vs voltage has reached to the v thoff threshold, at which point the internal mosfet is turned off. as mentioned before, if the v thoff threshold is reached before the ton period has expired, the device will enter the light load mode. under this mode, the mosfet will not be turned on the next switching cycle. when the drain voltage has increased to 1.5v , the toff timer is triggered, durin g which the mosfet is prevented from turning on. 10 gate connect gate to the gate of the controlled mosfet through a small series resistor using short pc board tracks to achieve optimal switching performance. the gate output can achieve > 2 - a peak source current when high and > 4 - a peak sink current when low into a large n - channel power mosfet. 11 sync if a falling edge is sensed on this pin, the internal mosfet is immediately turned off, irrespective of the sensed drain to source voltage or the state of the ton timer. this characteristic allows the device to be easily used in a continuous conduction mode (ccm) system. the sync pin needs to be connected to a suitable control signal on the primary side of the convertor, using a high voltage isolation cap, t ransformer or other suitable means. 1 2 dgate d uring over voltage protection, dgate will drive external mosfet to pull down the output voltage so that primary side controller will start the short circuit protection handling. 13 gnd this is the reference potential for all internal comparators and thresholds. 1 4 vcc v cc supplies all the internal circuitry of the device. a dc supply is required to be connected to this pin. it is required that a 10 f or larger capacitor is placed between this pin and gnd, as close to the pins as possible. the device will not function until the v cc has risen above the uvlo threshold. the device can safely be turned off by bringing v cc below the uvlo threshold (minus the uvlo threshold hysteresis). if v cc drops below the uvlo threshold (minus uvlo threshold hysteresis), the mosfet is turned o ff and the toff/en pin is internally connected to gnd.
ar2003 fv 4 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv functional block diagram sfb vs ovs toff / en ton dgate vcc sync gnd vd gate enable control off timer general control logic & exception handling on timer driver uvlo vref ovp vref avdd 1 . 5 v v thoff v thon avdd - 2 v rupper rlower ldo avdd a gnd
ar2003 fv 5 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv absolute maximum ratings (note 4) symbol parameter rating unit vcc i nput v oltage r ange vcc - 0.3 to 24 v vd i nput v oltage r ange vd - 1 to 20 0 v vs i nput v oltage r ange vs - 1 to 1 v toff/en, ton , ovs , sync i nput v oltage r ange o ther - 0.3 to 6 v t j operating j unction t emperature - 40 to +150 c t l lead temperature + 260 c t st storage t emperature - 65 to +150 c esd human body model, jesd22 - a114 2 kv charged device model, jesd22 - c101 0.5 note 4: these are stress ratings only. operation outside the absolute maximum ratings may cause device failure. operation at the absolute maximum rating for extended periods may reduce device reliability. package thermal data (@t a = +25c, unless otherwise specified) symbol parameter rating unit p d power dissipation (note 5) 0.67 w r ja jc notes: 5. device mounted on fr - 4 pcb, 2oz with minimum recommended pad layout. 6. device mounted on 25mm x 25mm 2oz copper board. 7. device mounted on 50mm x 50mm 2oz copper board. recommended operating conditions symbol parameter min max unit v cc supply v oltage r ange 4.5 2 1 v v ds voltage c ross d rain and s ource - 1 20 0 f s w switching frequency 20 600 khz t j operating junction t emperature r ange - 40 + 125 c r toff toff r esistor v alue 85 200 k ton ton r esistor v alue 8.2 5 100 k vcc v cc b ypass c apacitor 10 C s ync sync p ulse w idth 20 C
ar2003 fv 6 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv electrical characteristics (@ t a = +25c, unless otherwise specified.) symbol parameter condition s min typ max unit v avdd i nternal r egulator o utput v cc = 5.5v C 4.5 C v v cc = 12 v C 4.7 C v icc start supply current ( u nder v oltage) v cc = 2.6v C 160 220 a icc standby supply current ( d isabled) v cc = 5.5v, r en/off = 0? C 380 500 v cc = 12v, r en/off = 0? C 450 600 icc on supply current ( e nabled) v cc = 5.5v, r en/off = 100k?, cgate=0 . C 1.5 2 ma v cc = 12v, r en/off = 100k?, cgate=0 . C 1.8 2.5 v cc = 5.5v, fsw=100khz , cgate=3300pf C 3.2 4.2 v cc = 12v, fsw=100khz , cgate=3300pf C 5 7 v en - on toff/en t urn - on t hreshold, r ising toff/en driven, v ton > 0.6v 1.31 1.4 1.49 v v en - off toff/en t urn - off t hreshold, f alling toff/en driven, v ton < 0.2v 0.55 0.6 0.65 i en - start toff/en i nput c urrent , d isabled r toff =50k - 21.5 - 20 - 18.5 a i en - on toff/en i nput c urrent , e nabled r toff =100k - 10.7 - 10 - 9.3 under - voltage lockout (uvlo) uvlo th vcc under voltage lockout threshold rising C 2.8 3.0 3.20 v uvlo hys vcc under voltage lockout t hreshold hysteresis C C 200 C mv mosfet voltage sensing v tharm gate r e - arming t hreshold v d to gnd, r ising 1.3 1.5 1.7 v v thon gate t urn - on t hreshold (v d - v s ) falling, v s = 0v - 220 - 150 - 80 mv v thoff hv gate t urn - off t hreshold (v d - v s ) rising, v s = 0v, v cc 4. 2 v - 6 - 4 - 2 mv v thoff lv gate t urn - off t hreshold v d - v s ) rising, v s = 0v, v cc < 4. 2 v - 30 - 20 - 10 t d on gate turn - on propagation delay from v t h on to gate > 1v C 30 50 n s t d off gate turn off propagation delay from v thoff to gate < 4v C 30 60 ns minimum on time t on - lr minimum on t ime at low r esistance r ton = 8.25 k? 0.26 0.34 0.42 s t on - hr minimum on time at high r esistance r ton = 100 k? 2.25 3 3.75 s minimum off time t off - l r minimum off time at low r esistance r to ff = 1 00k? 0.8 1.4 2 s t off - hr minimum off time at high r esistance r to ff = 2 00k? 7.5 10 12.5 s t off - lv minimum off time at low voltage v en/toff =1v 0.8 1.4 2 s t off - hv minimum off time at high voltage v en/toff =2v 7.5 10 12.5 s t off - ov minimum off time at over voltage 2v< v en/toff ar2003 fv 7 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv electrical characteristics (@ t a = +25c, unless otherwise specified.) (cont.) symbol parameter condition s min typ max unit over voltage protection v ovp 0 h output over v oltage high th r eshold when ovs = 0 C C 6 C v v ovp 0 l output over v oltage low th r eshold when ovs = 0 C C 5.4 C v synchronization v thsync sync f alling t hreshold gate output from high to low v avdd - 2.4 v avdd - 2.0 v avdd - 1.6 v t sdly sync p ropagation d elay ( n ote 8) sync falling to gate falling 10%, 4.5v < v cc < 5.5v C 40 70 ns r sync sync pull up resistance ( n ote 8) internal resistance from sync to v cc , 4.5v < v cc < 5.5v 1.6 2.0 2.4 k ? gate driver r gup gate pull up resistance enabled i gate = - 100ma C 2.3 4 ? r gdn gate pull down resistance enabled i gate =100ma C 1.1 2 v ohg gate output high voltage i gate = - 100ma, vcc=5v 4. 7 -- C v i gate =100ma, vcc>10v 9. 5 -- C v olg gate output low voltage i gate =100ma, vcc=0v C -- 0. 3 t f gate gate fall time 4v to 1v, c gate = 3300pf C 14 30 ns 10v to 1v, c gate =3300pf C 20 35 t r gate gate rise time 1v to 4v, c gate = 3300pf C 16 3 5 1v to 10v, c gate = 3300pf C 25 40 t dis disable delay (note 8) en falling to gate falling C 160 200 exception handling t over over temperature C C + 150 C c t re c over temperature to r ecover from over temperature e xception C C + 125 C c t d gate delay of turn on pull d own mosfet cd gate =400pf C 1.5 C us note 8 : g uarantee d by design .
ar2003 fv 8 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv typical performance characteristics 2.6 2.7 2.8 2.9 3 3.1 3.2 - 50 - 25 0 25 50 75 100 125 150 vcc - threshold voltage - v t j - temperature - c figure 1. threshold voltage vs temperature vcc on vcc off 0 500 1000 1500 2000 2500 - 50 - 25 0 25 50 75 100 125 150 i vcc - bias supply current - ua t j - temperature - c figure 2. bias supply current vs temperature vcc = 5 v, no gate switching 0 4 8 12 16 20 0 100 200 300 400 500 600 700 ivcc - supply current - ma f sw - switching frequency - khz figure 3. supply current vs switching frequency c gate = 3.3nf c gate = 0nf - 10.7 - 10.5 - 10.3 - 10.1 - 9.9 - 9.7 - 9.5 - 9.3 - 50 - 25 0 25 50 75 100 125 150 i en - on - enable current - ua t j - temperature - c figure 4. enable current vs temperature
ar2003 fv 9 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 ven - threshold voltage - v t j - temperature - c figure 5. threshold voltage vs temperature ven on 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 - 50 - 25 0 25 50 75 100 125 150 v thsync - sync threshold voltage - v t j - temperature - c figure 6. sync threshold voltage vs temperature v reg - v sync 0 10 20 30 40 50 60 - 50 - 25 0 25 50 75 100 125 150 t sdly - sync propagation delay time - ns t j - temperature - c figure 7. sync propagation delay time vs temperature - 24 - 22 - 20 - 18 - 16 - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 - 50 - 25 0 25 50 75 100 125 150 v thoff - voltage - mv t j - temperature - c figure 8. v ds gate - off threshold voltage vs temperature vcc>4.3v vcc<4.3v - 0.18 - 0.17 - 0.16 - 0.15 - 0.14 - 0.13 - 0.12 - 0.11 - 0.1 - 50 - 25 0 25 50 75 100 125 150 v thon - voltage - v t j - temperature - c figure 9. v ds gate - on threshold voltage vs temperature 20 25 30 35 40 45 50 - 50 - 25 0 25 50 75 100 125 150 gate propagation delay time - ns t j - temperature - c figure 10. gate propagation delay time vs temperature t doff t don
ar2003 fv 10 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv 10 12 14 16 18 20 22 24 26 28 - 50 - 25 0 25 50 75 100 125 150 gate rise and fall time - us t j - temperature - c figure 11. gate rise and fall time vs temperature t rgate t fgate 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 25 50 75 100 125 150 t on - minimum on time - us r ton - ton resistance - k figure 12. minimum on time vs ton resistance 0 2 4 6 8 10 12 0 50 100 150 200 250 300 350 t off - minimum off time - us r toff - toff resistance - k figure 13. minimum off time vs toff resistance 0 1 2 3 4 5 6 7 8 9 10 - 50 - 25 0 25 50 75 100 125 150 ton and toff time - us t j - temperature - c figure 14. ton and toff time vs temperature toff hr , r entoff =200k ton hr , r ton =100k toff lr , r entoff =100k ton lr , r ton =8.25k - 200 - 150 - 100 - 50 0 50 100 - 1 0 1 2 3 4 5 6 ivd - bias current - ua vd - drain sense voltage - v figure 15. vd bias current vs drain sense voltage vs = 0 v > <
ar2003 fv 11 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv m odes o f o peration general description ar2003 fv is a n active/ synchronous rectifier which can work with many different primary side controllers. ar2003 fv can be used in both ssr and psr system s . ar2003 fv has preset of internal feedback resistor that can reduce external bom for 5v or 12v system. uvlo mode when vcc doe s not reach uvlo th , or fall s blow uvlo th - uvlo hys , ar2003 fv will be in uvlo mode. in this mode, ar2003fv will turn off external mo s fet , and toff/en pin will internally short to gnd . vcc cu r rent will be icc start . sleep mode sleep mode is a low - power operating mode similar to uvlo mode, except that this mode is entered by forcing v en below the v en - off threshold via external control. many internal circuits are turned off to reduce power consumption in this model to reduce device operating losses. external control overrides any internal timing conditions, and immediately forces the gate output lo w and enters sleep mode. vcc current is reduce d to icc standby level. as v en is restored to above the v en - on threshold, the device exits sleep mode into light - load mode after a delay of several s , allowing re - powered internal circuits to settle. active mode this is the normal operation mode when inductor current is large enough and synchronous conduction time is longer than t on . a r mosfet will be turned on and off according to v d - v s , t on and t off setting and sync pin. light - load mode when inductor current is small and synchronous conduction time is less than t on , the a r mosfet will be kept off to reduce switching power loss. voltage across body diode of a r mosfet is continuously monitored. when the mosfet body - diode conduction time is more than t on , the device will be back to active mode again. over voltage protection over voltage mostly likely was an indication of optical coupler short. therefore, just reporting output error information is not enough. ar2003 fv will drive an external f et to create a short situation so that primary side can be set to whole system to restart. over t emperature protection ( o nly for secondary - side s ynchronous r ectification a pplication ) when ar2003 fv is over heated , ar2003 fv will light up the optical coupler to let the primary side deliver very little or no energy so that the whole system will cool down. hysteresis is set to + 25 c. usually, v cc might drop blow uvlo th - uvlo hys (around 2.8v) due to system load. ar2003 fv will enter uvlo mode, and system might restart again. if ar2003 fv is over heated again in short time, v cc might be kept around 2.8v. the primary side controller might treat this event as over current or short current, and enter s its protection mode. over current protection over current protection is not implemented in ar2003 fv . over current protection will be carried out in primary side. short current protection short current protection is not implemented in ar2003 fv . short current protection handli ng will be carried out in primary side.
ar2003 fv 12 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv application information on timer programming the t on period (minimum on - time) is programmed by adding a resistor from ton pin to ground. in the application, its likely that when the mosfet is turned on there will be some ringing generated due to parasitic within the system. the minimum on time will stop the devic e reacting to this ring ing, by blanking out any signal received fr om the drain to source (v d - v s ) comparator once the device is initially triggered. this will keep the mosfet turned on for duration of the minimum on - time, irrespective of the v d - v s voltage during this period. if v d - v s reach es the gate turn - off threshold within the minimum on - time period, the device will change into light load mode for the next switching cycle. if the load conditions of the system change and the mosfet turn - off threshold is once again reached once the minimum o n - time is over, the device reverts to its nominal mode of operation. t on (s) = 0.028s * r ton (k) + 0.1s, 0. 24 s < t on < 4.3s, 5k < r ton <150k enabling and off timer programming when v cc < uvlo, toff/en is internally connected to ground through a resistor. if v cc rise s above uvlo, the chip is in the sleep mode, a current source will deliver 20a (i en - start ) to toff/en pins. if r toff > 70k?, v toff/en will over 1.4v (v en - on ), ar2003 fv will enter active mode. and the internal current source will switch to deliver 10a (i en - on ) to toff/en pin. user can program the minimum off - time by choosing proper value for r toff . t off (s) = 0.083s* (r toff (k ? ) - 81k ? ), valid for 85k ? < r toff < 200k ? user can also program off timer by control the v toff/en . t off (s) = 0.083s* (v toff/en - 0.81v), valid for 0.85v < v toff/en < 2v the minimum off - time is the minimum time ; the internal mosfet will be turned off once v thoff turn off threshold is reached. this avoids the mosfet accidentally being retriggered by ringing after turn off. minim um o n t ime >the time from vds fall under v thon to vds ringing voltage < v thoff check with no load waveform maxim um o n t ime < the time from vds fall under v thon to vds =v thoff check with no load waveform minim um o ff t ime > the time from vds > v tharm to vds ringing negative voltage higher than v thon after turn off check with no load waveform maxim um o ff t ime < the time from vds=v tharm to vds drop from vcc level check with maxim um load waveform no load mode vds waveform minimum on time maximum on time minimum off time maxima off time t fsw vds=v thoff vds= v thon = - 150mv vds= v tharm = 1.5 v vds= v tharm = 1.5 v maximum load mode vds waveform vds =v thon = - 150mv
ar2003 fv 13 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv application information (cont.) sync i nput c ircuit sync pin is internally pulled up to internal avdd (4.2 v to 5v) through a 2k? resistor. if a falling edge of more than 2v is detected, the external mosfet will be turned off by ar2003fv . if the amplitude of sync signal is larger than 4.2v, an external resistor should be used to limit the input current less than 2ma. ordering information (note 9 ) p art number marking reel size (inches) tape width (mm) quantity per reel ar20 03 fv - 13 ar20 03 13 12 3,000 note 9 : for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information ar2003
ar2003 fv 14 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv package outline dimensions (all dimensions in mm.) please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. (1 ) package t y pe: v - dfn3535 - 14 suggested pad layout please see ap02001 at http://w ww.diodes.com/datasheets/ap02001 .pdf for the latest version. (1 ) package t y pe: v - dfn3535 - 14 dimensions value (in mm) c 0.500 c1 1.500 g 0.250 g1 0.250 x 0.350 x1 0.600 x2 2.100 x3 2.350 y 0.600 y1 0.350 y2 2.100 y3 3.800 v - d fn 3535 - 14 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 - - 0.15 b 0.20 0.30 0.25 d 3.45 3.55 3.50 d2 1.90 2.10 2.00 e 3.45 3.55 3.50 e2 1.90 2.10 2.00 e - - 0.50 e1 - - 1.50 l 0.35 0.45 0.40 z - - 0.625 all dimensions in mm a a3 seating plane d e b e2 (pin #1 id) l d2 e z a1 e1 x3 y3 c c1 y x2 y2 x g1 g x1 y1
ar2003 fv 15 of 15 december 2014 document number: ds 37473 rev. 3 - 2 www.diodes.com ? diodes incorporated ar 2 0 03fv important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2014, diodes incorporated www.diodes.com


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